Data Sheet FET dan SCR (contoh tugas)

PTF 10043
12 Watts, 1.9–2.0 GHz
GOLDMOS® Field Effect Transistor


INTERNALLY MATCHED

Performance at 2.0 GHz, 26 Volts
- Output Power = 12 Watts Min
- Power Gain = 12 dB Typ at 3 Watts
- Efficiency = 45% Typ

Full Gold Metallization

Silicon Nitride Passivated

Back Side Common Source

Excellent Thermal Stability
• 100% Lot Traceability
Description
The PTF 10043 is an internally matched GOLDMOS FET intended
for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at
12 watts, it operates at 45% efficiency with 12 dB gain. Nitride surface
passivation and full gold metallization ensure excellent device
lifetime and reliability.



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CS89M
CS89N

DESCRIPTION:
The CENTRAL SEMICONDUCTOR CS89M
series type is an Epoxy Molded Silicon Controlled
Rectifier designed for sensing circuit applications
and control systems.