12 Watts, 1.9–2.0 GHz
GOLDMOS® Field Effect Transistor
INTERNALLY MATCHED
Performance at 2.0 GHz, 26 Volts
- Output Power = 12 Watts Min
- Power Gain = 12 dB Typ at 3 Watts
- Efficiency = 45% Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
• 100% Lot Traceability
Description
The PTF 10043 is an internally matched GOLDMOS FET intended
for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at
12 watts, it operates at 45% efficiency with 12 dB gain. Nitride surface
passivation and full gold metallization ensure excellent device
lifetime and reliability.
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CS89M
CS89N
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CS89M
series type is an Epoxy Molded Silicon Controlled
Rectifier designed for sensing circuit applications
and control systems.
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